Single-dopant band bending fluctuations in MoSe2 measured with electrostatic force microscopy

Abstract

In this paper, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer ${\mathrm{MoSe}}_{2}$ sample. We show that noise in this device is intrinsically bias dependent due to the bias-dependent surface potential and does not require that the frequency or magnitude of individual dopant fluctuations are themselves bias dependent. Finally, we measure spatial nonhomogeneities in band bending (charge reorganization) timescales.