Abstract
Local surface photovoltage (SPV) and current imaging, using a scanning tunneling microscope (STM), were utilized in order to elucidate the effect of a single adsorbed cesium atom on the local electronic structure of p- and n-type Si(001)2×1 surfaces, in its vicinity. The Cs adatom gives rise to a small depression at negative sample bias constant current topography (CCT) image. The opposite sides of two adjacent Si dimers appear as protrusions. SPV and current imaging show that the Fermi level is ‘softly’ pinned at the surface in the location of these protrusions, possibly because of a downshift and/or broadening of the π ∗ band and its screening of the Cs positive charge.
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