Abstract
Single crystals of ZnSe up to 2 cm in length have been grown by iodine chemical transport with a 3–5°C thermal gradient. Dopants were introduced uniformly by this growth technique. Nonhomogeneous crystals of Zn(S, Se) were obtained by this method. Epitaxial growth of ZnSe on GaAs substrates by HBr transport was studied for various orientations. Use of excess Zn during deposition produced films having mobilities greater than 1000 cm 2/V-sec.
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