Abstract
In this paper, we report the synthesis of iron silicide and β-iron disilicide nanowires with chemical vapor deposition; remarkably, the latter has drawn much attention but has seldom been achieved. We also propose the formation mechanisms for the two phases. To investigate the effects of the growth parameters on compositions and morphologies of the iron silicide nanowires, we changed and studied the reaction time, substrate temperature, position of samples, and pressure. The reaction concentration was found to be altered by all of the parameters; thus, we observed different nanowires in terms of morphologies and compositions with scanning electron microscopy. To confirm the growth direction and crystal structure of the nanowires, we conducted x-ray diffraction and high-resolution transmission electron microscopy studies. With the potential of being utilized as circuit elements in electronic devices for Schottky barriers, ohmic contacts, and interconnection among silicon-based transistors, the silicide work at nanoscale is beneficial for nanoelectronics. Understanding the effects of these growth parameters facilitates the control of nanowire growth with better quality.
Highlights
For the miniaturization of electronic devices, various materials are being studied for their promising applications
We demonstrate the synthesis of single-crystalline FeSi and β-FeSi2 nanowires by chemical vapor deposition (CVD)
We report efficient synthesis and structural characterization of the single crystalline β-FeSi2 nanowires via chemical vapor deposition
Summary
For the miniaturization of electronic devices, various materials are being studied for their promising applications. Growth of a variety of metal silicide NWs, ranging from transition metal silicides to rare-earth silicides, has been reported [16,17,18,19,20] These silicide NWs were grown by first depositing an appropriate metal film on a Si substrate, followed by heat treatment. Some growth methods have been reported for forming free-standing silicide NWs. Ouyang et al used FeCl3 powders to grow ε-FeSi NWs on a Si wafer in an alumina tube furnace via Vapor-Phase Synthesis [21]. We report efficient synthesis and structural characterization of the single crystalline β-FeSi2 nanowires via chemical vapor deposition
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