Abstract

InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5 × 103 A W−1 and external quantum efficiency of 5.04 × 105 %. This photodetector may have potential applications in integrated optoelectronic devices and systems.Electronic supplementary materialThe online version of this article (doi:10.1007/s40820-015-0058-0) contains supplementary material, which is available to authorized users.

Highlights

  • One-dimensional semiconductor nanowires have attracted considerable attention as unique building blocks for various interesting applications in integrated electronic and optoelectronic devices and systems, such as nanoscale lasers, fieldeffect transistors, solar cells, and photodetectors [1,2,3,4,5,6,7,8]

  • To the best of our knowledge, there is no report on roomtemperature infrared photodetector based on InGaAs nanowires

  • The achieved devices exhibit good photoresponse in a broad spectral range from 1100 to 2000 nm, in which the responsivity (R) and the external quantum efficiency (EQE) are comparable with those infrared photodetectors based on other III–V nanostructures at room temperature [8, 16]

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Summary

Introduction

One-dimensional semiconductor nanowires have attracted considerable attention as unique building blocks for various interesting applications in integrated electronic and optoelectronic devices and systems, such as nanoscale lasers, fieldeffect transistors, solar cells, and photodetectors [1,2,3,4,5,6,7,8]. Keywords InGaAs Á Nanowire Á Near-infrared Á Photodetector To date, infrared photodetectors based on InAs, InPAs, and InGaSb nanowires have been reported [8, 10, 16, 17].

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