Abstract
AbstractIn this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 μm to 10 μm, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X‐Ray Diffraction (HR‐XRD) and cross‐sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X‐ray symmetric rocking curve (0002) 2θ – ω scan of 290 arc sec was obtained for a 1 μm thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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