Abstract
The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95% using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.
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