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Abstract
β gallium oxide (β-Ga2O3) homoepitaxy films were grown on (2‾01) β-Ga2O3 substrates by metal organic chemical vapor deposition (MOCVD). The effect of growth temperature on the crystalline quality was measured and systematically analyzed. The results showed the growth temperature played an important role in crystalline quality of β-Ga2O3. The optimized single crystalline β-Ga2O3 film was grown at 750 °C, and the full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curve was 21.6 arcsec, smaller than that of the β-Ga2O3 substrate (26.3 arcsec). The film exhibited a greatly smooth surface and the root-mean-square (RMS) roughness was 0.68 nm. And the arrangement of atoms inside the film was in good accordance with lattice constants of β-Ga2O3. In addition, the effect of the band structure on the luminescent properties of β-Ga2O3 was discussed.
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