Abstract
We report on the growth and characterization of sapphire single crystals for X‐ray optics applications. Structural defects were studied by means of laboratory double‐crystal X‐ray diffractometry and white‐beam synchrotron‐radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique. Therein the dislocation density was 102–103 cm−2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections. This crystal has suitable quality for application as a backscattering monochromator. A clear correlation between growth rate and dislocation density is observed, though growth rate is not the only parameter impacting the quality.
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