Abstract
Electron-beam-induced deposition (EBID) is a useful technique for direct-writing ofthree-dimensional dielectric, semiconductor, and metallic materials with nanoscaleprecision and resolution. The EBID process, however, has been limited in manycases because precursor byproducts (typically from organic precursors likeW(CO)6) are incorporated into the deposited material resulting in contaminated and amorphousstructures. In this work, we have investigated the structure and composition ofEBID tungsten nanostructures as-deposited from a tungsten hexafluoride(WF6) precursor. High resolution transmission electron microscopy, electron diffractionand electron spectroscopy were employed to determine the effects that theelectron beam scanning conditions have on the deposit characteristics. Theresults show that slow, one-dimensional lateral scanning produces texturedβ-tungsten nanowire cores surrounded by an oxide secondary layer,while stationary vertical growth leads to single-crystal [100]-orientedW3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowirestructure and composition.
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