Abstract
A high electron mobility single-crystal n-InAs coupled Josephson junction with refractory metal Nb electrodes has been fabricated. Josephson current has been obtained for devices with electron carrier concentrations of 1016–1018 cm−3 and with Nb electrode spacings longer than 0.5 μm. The devices have a planar geometry with implicit potential for gate control. The rf sputter cleaning of the InAs surface prior to Nb deposition is found to have significant effects on the performance of the devices. The device characteristics are explained by the proximity effect theory.
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