Abstract
A closed-tube horizontal vapor transport system has been used for the growth of large single crystals of Zn3P2. Crystals were grown both with and without iodine chemical transport. The temperature profiles used and growth rate variations are described. When low concentrations of iodine on the order of 5â10 mg/cm3 were used an enhancement in growth rate was found, whereas a reduction in growth rate was found for larger iodine concentrations on the order of 25 mg/cm3. The dimensions of the largely single crystals were 1.2 cm in diameter and 4 cm long. The as-grown resistivities for the crystals grown by both techniques were on the order of 50 Ω cm.
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