Abstract
Manganese gallium nitride (Mn 4− x Ga x N) single crystals as well as Mn-doped GaN single crystals were prepared by heating a Mn–Ga–Na melt at 750 °C and 5 MPa of N 2 pressure. The Mn 4− x Ga x N crystals had the cubic anti-perovskite-type structure (space group: Pm 3m ) with a lattice parameter a=3.8886(9) Å. The single crystals exhibited magnetic transitions from a ferrimagnetic phase with a spin–glass-like disorder to an antiferromagnetic phase at 107 K, and then to a paramagnetic phase at 270 K. From these magnetic transition temperatures, the composition of the Mn 4− x Ga x N single crystals was estimated to be Mn 3.07Ga 0.93N.
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