Abstract
Single crystal boules of Cd 1−xMn xSe with x = 0.01, 0.05, and 0.10 have been grown by a modified Bridgeman method using 5% excess selenium to lower the melting point. A technique has been developed for the growth of high quality, single grain boules with demonstrated uniform manganese distribution. Free carriers have been introduced in a controlled fashion by adding gallium to the melt and annealing crystal slices in cadmium vapor. Reproducible carrier concentrations from 2 × 10 17 to 2 × 10 18cm −3 have been achieved.
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