Single crystal growth of bulk SnS2 and high yield preparation of few-layer SnS2

Abstract

Abstract Two-dimensional layered SnS2 is attracting more and more attention due to its good electronic and optoelectronic properties. Herein, high yield and high quality SnS2 single crystals have been grown by chemical vapor transport method using muffle furnace instead of the traditional tube furnace. In addition, we report a modified mechanical exfoliation method, which is based on strong adhesion between gold decorated substrate and bulk SnS2, to produce high yield few-layered SnS2 with typical area size of nearly thousands of square microns. The electrical properties of FETs based on few-layered SnS2 further confirm the high quality of layered SnS2 with the carrier mobility of 2.8 cm2V−1s−1 and the current on/off ratio up to 105. It suggests that the exfoliation method introduced here provides an effective way to produce large-area, high-quality few-layered S n S 2 materials for future application.