Single crystal growth of a layered perovskite V oxide Sr4V3O10 with an FZ method under controlled ρ(O2)

Abstract

We have successfully grown single crystals of a layered compound Sr4V3O10 with a floating-zone method under controlled O2 partial pressure (p(O2)). We realized that the adjustment of p(O2) less than 10-28 atm was indispensable for the crystal growth, and achieved that growth condition by an oxygen pump system. Sr4V3O10 is a member of the Ruddlesden-Popper type series of Srn+1VnO3n+1 with n = 3. The crystal structure was indexed in a tetragonal space group I 4/mmm. The unit cell dimensions of Sr4V3O10 were found to be a = 3.858 A and c = 27.93 Å. We have measured electrical resistivity from 30mK – 300K and magnetic susceptibility from 1.8K – 300K. The resistivity of Sr4V3O10 showed that it is a metallic conductor from 300 K to 30 mK. The magnetic susceptibility of the sample shows the Curie-Weiss type temperature dependence, χ = χo + C/(T-Θ). The values of paramters were obtained as χo = 6.93 x 10-5 emu/mole, Θ = -8.05 K, and C = 0.186 emu∣K/mole.