Single crystal growth and electrical transport properties of η-Mo4O11

Abstract

Abstract Single crystals of quasi-two-dimensional charge-density-wave (CDW) material η-Mo4O11 were successfully grown by chemical vapor transport (CVT) method with TeCl4 and I2 as carrier gas, respectively. The obtained crystals with TeCl4 as carrier gas have a largest size of 16 × 6 × 0.8 mm3 with high quality determined by x-ray single-crystal diffraction, chemical analysis and electrical transport measurements. Temperature dependent resistivity shows that η-Mo4O11 is of highly anisotropy and undergoes successive CDW transitions at 105 K and 30 K, consistent with early reports. It is found that η-Mo4O11 with TeCl4 as carrier gas has a relative higher Residual Resistance Ratio (RRR), carrier density and mobility than that with I2 as carrier gas. This results in a much smaller magnetoresistance but pronounced Shubnikov-de Haas oscillations, providing opportunities to study the unusual oscillations of this compound beyond the quantum limit. For the Hall resistance, a drop above 10 T is reproduced corresponding to a steep increase of magnetoresistance.