Abstract
A3Nb1-xGa3+(5/3)xSi2O14 (ANGS, A=Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (µ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the µ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a=8.282, 8.087 and c=5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.
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