Abstract
Dislocation behavior in isoelectronically-doped InP single crystals has been studies by X-ray topography. Single doping with Al, Ga, Sb or As does not produce dislocation-free material along the entire growth axis due to problems at high doping concentrations. In order to maintain dislocation-free growth, multiple doping has been examined with combinations of (Ga+Sb), (Ga+As) and (Ga+As+Sb). The best combination to reduce the dislocation density along the entire crystal is (Ga+Sb). Dislocation configurations on the glide plane in the isoelectronically-doped crystals are more irregular than those in crystals doped with electrically active impurities, such as Zn or S. This indicates that the dislocation motion in isoelectronically-doped crystals is markedly different from that in crystals doped with electrically active elements.
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