Abstract
Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.
Highlights
Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications
We demonstrate transfer of functional oxides as thin as one unit cell (4 Å), which is almost three orders of magnitude thinner than any other transfer technique reported for complex oxides
We start by growing single crystal, 0.4–100-nm thick PZT on 20 nm thick La0.7Sr0.3MnO3 (LSMO) coated SrTiO3 (STO) substrate by using pulsed laser deposition (PLD)
Summary
Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon. We present a fundamental advancement in the integration of such dissimilar materials This is achieved by epitaxial transfer of single-crystalline functional oxides directly onto Si. Because of the fact that the process can be carried out at room temperature, it avoids the interface chemistry and thermal issues described above. We demonstrate transfer of single-crystalline superlattices and multiferroic heterostructures on Si that illustrate the tremendous flexibility offered by the technique reported in this work
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