Abstract
A hexagonal-boron nitride (h-BN) self-aligned single-crystal array (SASCA) is reported by Lei Fu and co-workers in article number 1500223. The h-BN SASCA shows orderly alignment and uniformly distribution. Moreover, it exhibits highly accordant spatial orientation and homogenous domain size, which can realize highly integrated and individually switching field-effect transistors (FETs) when serving as gate dielectrics. Additionally, circular h-BN single-crystals, which are considered as the building blocks of h-BN SASCA, are also observed.
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