Abstract
A single cell element of chalcogenide random access memory wasfabricated by using the focused ion beam method. The contact sizebetween the Ge2Sb2Te5 phase change film and thetop electrode film is about 600 nm (diameter) and the contact area iscalculated to be 0.28 μm2. The thickness of the phase change filmis 83 nm. The current–voltage characteristics of the cell element arestudied using the home-made current–voltage tester in our laboratory.The minimum threshold current of about 0.6 mA is obtained.
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