Abstract

1D nanoscale photodetectors have been extensively investigated for the unique geometry structure and novel physical and chemical properties. The 1D CdS materials have received much attention in the field due to its high photosensitivity and fast response, while how to achieve high responsivity is still in development, despite it is the crucial target to the excellent photodetector. Single crystal CdS nanorods (NRs) are synthesized on SiO2/Si substrate over large scale via the chemical vapor deposition method. The individual single CdS nanorod photodetector have been fabricated by using photolithography process and the responsivity of the photodetector is investigated systematically. At a very low percentage of illumination intensity (2%, 0.5 mW cm−2) under 450 nm, the photodetector exhibited a high responsivity and reached at 1.23 × 104 A W−1 with the bias voltages of 2 V. The good crystallinity and large surface of CdS nanorod are the reasons of this excellent performance of CdS based photodetector. The strategy proposed herein appears to hold great potential for a high responsivity with low illumination intensity.

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