Abstract
We have studied the effect of the out-of-plane lattice on tensile strained (001) La0.7Ca0.3MnO3 thin films. The films were deposited on SrTiO3 substrates through magnetron sputtering technique under different Ar/O2/He gas flow ratios, varying the out-of-plane lattice from 3.823 Å to 3.845Å, which corresponds to an increase in the metal-insulator transition temperature. These changes are reversible after high-temperature anneal due to a massive helium release from the films occurring at temperatures around 540°C. The dependence of the transition temperature on lattice distortion is in good agreement with the prediction proposed by Millis et al. [J. Appl. Phys. 83, 1588 (1998)]. Considering the Jahn-Teller distortion enhanced by the in-plane biaxial strain in the films, we attribute the elevated transition temperature to the distortion relaxation due to He doping in the tensile strained films. The effective He doping by magnetron sputtering technique provides a simple strategy for manipulating functionality of oxide films.
Highlights
As a critical aspect of epitaxial oxide films, strain engineering has been intensively studied since the discovery of high-temperature superconducting cuprates.[1,2] So far, most previous work on the strain effects has been carried out by choosing various single crystal substrates, such as SrTiO3 and LaAlO3, etc, to tune the in-plane biaxial strain in films.[3]
It is demonstrated that the out-of-plane lattice of the tensile strained LCMO films is stretched by 0.28% and 0.57% respectively by using the He-co-sputtering method
We have demonstrated an elongation of the out-of-plane lattice in the tensile strained LCMO films by using the He-co-sputtering method, accompanied by an increase in the transition temperature
Summary
As a critical aspect of epitaxial oxide films, strain engineering has been intensively studied since the discovery of high-temperature superconducting cuprates.[1,2] So far, most previous work on the strain effects has been carried out by choosing various single crystal substrates, such as SrTiO3 and LaAlO3, etc, to tune the in-plane biaxial strain in films.[3]. Guo et al.[12] reported reversible control for the out-of-plane lattice in La0.7Sr0.3MnO3 films epitaxially grown on SrTiO3 substrates, which in turn altered the JT distortion in the films Later, they demonstrated that implanted He atoms modulate the out-of-plane strain in SrRuO3 films on SrTiO3 substrates.[13] Considering that ion implantation needs special facility and it may introduce defect and/or disorder in films during the relatively high energy process, in this work we demonstrate He doping in tensile strained LCMO films by using a simple and popular magnetron sputtering technique.
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