Abstract
Advancing efficient catalysts for oxygen reduction reaction (ORR) or oxygen evolution reaction (OER) is imperative for commercializing emerging energy devices. Using density functional theory (DFT) calculations, we propose doping different transition metal (TM) atoms to regulate the electronic structures of the two-dimensional 1T-HfTe2 monolayer to achieve bifunctional catalysis for the ORR/OER. Due to the small electronegativity of the Hf atom, we found the doped TM atoms can generally form anion centers by accepting abundant charges from the Hf interlayer. At the same time, the highly conductive 1T-HfTe2 contributes to the charge transfer between the active center and the reaction intermediates, rendering the designed SACs the tunable activity for the reactions. By comparing the theoretical overpotentials of ORR and OER on 15 single-atom catalysts (SACs), Pt-doped system exhibits excellent catalytic activity for both ORR and OER, outperforming the traditional Pt(111) and RuO2(110) catalysts. Based on the charge transfer mechanism, we clarified that the doped TM atoms act as a ‘bridge’ to transfer the electrons from the substrate to the reaction intermediates, thereby effectively contributing to the improvement of catalytic activity. In summary, our study shows that, by doping appropriate TM atoms, the intrinsic inert HfTe2 can be activated toward efficient ORR/OER. This could provide some guidance for the design of new two-dimensional ORR/OER bifunctional catalyst materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.