Abstract
Single- and double-layer insulator MOS capacitors on InAs were investigated for possible MOS device applications. The single layers were formed by anodic oxidation or by reactive evaporation of SiO 2. The double layers were formed by depositing SiO 2 on the anodic oxide. With the anodically oxidized InAs, the fast state and fixed charge densities were respectively two and five time greater than with the deposited SiO 2. The slow state densities were approximately the same for these insulators. No collected charge between the two insulators of the double-layer capacitors was observed.
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