Abstract
This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Bornstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses single and coupled quantum wells based on SiGe. Topics include the photoluminescence from SiGe/Si quantum wells (spectral features, dependence on excitation power and temperature), effects of quantum confinement, post-growth annealing, electric fields and external stress, the Fermi-edge singularity, time-resolved photoluminescence, growth mode transition, type-II strained Si quantum wells, coupled quantum wells, electroluminescence, interband absorption and intraband absorption, second-harmonic generation, and phonon modes.
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