Abstract
A model capable of accurately describing the J- V characteristics of SINFET devices is presented in this paper. The model allows the forward voltage, injected minority carrier profile, the electric field and the injection ratio to be obtained as functions of the forward current. The model is applicable over a wide range of current levels and can be used to study SINFETs operating in the low level, moderate level, and high level injection regions. Insight gained from the model allows the current handling capability of the SINFET to be optimized systematically.
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