Abstract
The fabrication and properties of a new x-ray lithography mask are described. The mask is made of a plasma enhanced chemical vapor deposited (PCVD) silicon nitride (SiN) membrane, which is supported by a silicon frame. The PCVD SiN film, deposited on silicon substrate under appropriate conditions, has a tensile stress of about 1×108 dyn/cm2, which is much lower than that of a Si3N4 film prepared by conventional (pyrolytic) CVD. The strength of the PCVD SiN membrane, stretched over a silicon frame, is as high as that of a Si3N4/SiO2/Si3N4 sandwich structure membrane, and is much higher than that of a conventional CVD Si3N4 membrane. The PCVD SiN film with low stress realizes a low distortion x-ray mask substrate which is expected to be applied to very fine pattern lithography.
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