Abstract
Temperature-dependent oxidation of Zr–Al at different temperatures (400, 600, 800, and 1000 °C) was studied. Formation of oxygen vacancies for charge compensation and occupants of oxygen at interstitial sites in the films have contributed to changes in terms of band transition and capacitance-voltage (C–V) flatband voltage shift. Dielectric constant (k) values (12.6–17.6) were obtained by the functional metal-oxide-semiconductor (MOS) capacitor. The acquisition of an abnormal C–V curve at 400 °C might be due to the occurrence of an inadequate oxidation at this temperature. The highest k value was demonstrated at 600 °C and beyond which the k value was decreasing. Though the film at 1000 °C possessed the lowest interface trap density, its low k value and compressive strain induced film buckling have weakened the overall film quality and thus was deemed not suitable for use in MOS application. Corresponding relationship with regards to structural, morphological and optical characteristics was also discussed.
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