Abstract
Abstract The study of neuronal and neurodegenerative diseases requires the development of new tools and technologies to create functional neuroelectronics allowing both stimulation and recording of cellular electrical activity. We present a model that describes electrolyte-gated organic field-effect transistors (EGOFETs) as neural interfaces. We show that our model can be successfully applied to understand the behaviour of a more general class of devices, including both organic and inorganic transistors. We introduce the reference-less (RL-) EGOFET and we show that it might be successfully used as a low cost and flexible neural interface for extracellular recording in vivo without the need of a reference electrode, making the implant less invasive and easier to use. The working principle underlying RL-EGOFETs involves self-polarization and back-gate stimulation, which we show experimentally to be feasible. Our results open the door to using and optimizing EGOFETs and RL-EGOFETs for neural interfaces.
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