Simultaneous preparation of high-purity silicides, eutectic Si/MSi2 (M: Nb, Ta, Mo, or W) alloys, and silicon through the separation of Si–M solvents using electromagnetic directional crystallization

Abstract

• Refractory silicides and eutectic Si/MSi 2 (M: Nb, Ta, Mo, or W) alloys were prepared by separation Si–M solvent. • High-purity silicon can be obtained by acid leaching of eutectic Si/MSi 2 alloy. • A new approach for simultaneous preparation of high-purity refractory silicides, eutectic Si/MSi 2 alloys, and Si. • Mechanism separation and impurity removal of Si–M alloy was discussed. Refractory silicides, eutectic Si/MSi 2 (M: Nb, Ta, Mo, or W) alloys, and high-purity silicon are materials that have been used in many high-tech industries. Today, they are prepared using different technologies, i.e., each of them is prepared using an independent technology. This study proposes a new method to simultaneously prepare three high-purity materials (refractory silicides, eutectic Si/MSi 2 alloys, and silicon) using electromagnetic directional crystallization. The Si–M (Si–Nb, Si–Ta, Si–Mo, or Si–W) solvents are separated using electromagnetic directional crystallization, and then the MSi 2 (NbSi 2 , TaSi 2 , MoSi 2 , or WSi 2 ) and eutectic Si/MSi 2 (Si/NbSi 2 , Si/TaSi 2 , Si/MoSi 2 , or Si/WSi 2 ) alloys are precipitated in sequence because the crystallization temperature of MSi 2 is higher than that of the eutectic Si/MSi 2 alloys. Additionally, owing to the segregation behavior of impurities between the solid and liquid phases, impurities in the Si–M solvents can be eliminated efficiently to prepare high-purity MSi 2 and eutectic Si/MSi 2 alloys. In addition, as the eutectic Si/MSi 2 alloys consist of Si and MSi 2 phases, high-purity Si powders (>99.98%) can be obtained by separating the Si and MSi 2 phases using acid leaching. The results indicate the feasibility of the new approach in preparing refractory silicides, eutectic Si/MSi 2 alloys, and high-purity Si.