Abstract

Simultaneous occurrence of multiphases were observed in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si by high-resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For Hf/Si system, an amorphous interlayer, Hf5Si3 as well as FeB and CrB types of HfSi were found to form simultaneously in samples annealed at 530 °C for 40–80 min. For Cr/Si system, an amorphous interlayer, Cr5Si3, CrSi, and CrSi2 were observed to form in samples annealed at 375 °C for 30 min. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of ultrahigh vacuum deposited refractory thin films. The results called for a reexamination of generally accepted ‘‘difference’’ in reaction sequence between bulk and thin-film couples.

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