Simultaneous Manipulation of O‐Doping and Metal Vacancy in Atomically Thin Zn10In16S34 Nanosheet Arrays toward Improved Photoelectrochemical Performance

Abstract

AbstractThe facile hydrothermal synthesis of Zn10In16S34 atomically thin nanosheet arrays on fluorine‐doped tin oxide glass (FTO) substrates is presented. Through controlling heat treatment in air, O‐doping and Zn, S vacancies were simultaneously introduced in Zn10In16S34 nanosheets with adjusted phase, morphology, chemical compositions, and energy level distribution. The surface defect states are passivated by depositing ultrathin Al2O3 film by atomic layer deposition technology. The performance of Zn10In16S34 photoanodes is largely improved, with 4.7 times higher current density and reduced onset potential. The experimental results and density functional theory calculations indicate that the enhancement is attributed to the fast photoexcited electron–hole pair separation, decreased surface transfer impedance, prolonged carrier lifetime, and reduced overpotential of oxygen evolution reaction.