Simultaneous growth of single-walled carbon-nanotube bridge structures using optical near-field effects

Abstract

Single-walled carbon nanotubes (SWNT) are regarded as one of the most promising materials for next-generation nano-electronics. However, there are still several challenges limiting its wide applications, including the inability in controlled growth of SWNT connections. In this study, we developed a laser-based in-situ growth approach to simultaneously fabricate SWNT-bridge arrays on a single silicon substrate with precise control. Localized thermal enhancement induced by optical near-field effects and an external electric field enabled the SWNT growth with precise control of growth sites and directions. Furthermore, laser polarization also shows significant influence on the control of growth site for SWNTs. Simultaneous growth of SWNT-bridge arrays in various patterns was achieved. Raman spectroscopy and I-V analysis demonstrated the successful growth of SWNT bridge structures. The laser-based growth method suggests a promising solution for the fabrication of SWNT-based systems in nano-electronics.Single-walled carbon nanotubes (SWNT) are regarded as one of the most promising materials for next-generation nano-electronics. However, there are still several challenges limiting its wide applications, including the inability in controlled growth of SWNT connections. In this study, we developed a laser-based in-situ growth approach to simultaneously fabricate SWNT-bridge arrays on a single silicon substrate with precise control. Localized thermal enhancement induced by optical near-field effects and an external electric field enabled the SWNT growth with precise control of growth sites and directions. Furthermore, laser polarization also shows significant influence on the control of growth site for SWNTs. Simultaneous growth of SWNT-bridge arrays in various patterns was achieved. Raman spectroscopy and I-V analysis demonstrated the successful growth of SWNT bridge structures. The laser-based growth method suggests a promising solution for the fabrication of SWNT-based systems in nano-electronics.