Simultaneous effects of Rashba, magnetic field and impurity on the magnetization and magnetic susceptibility of a GaAs-semiconductor quantum ring

Abstract

The magnetization and magnetic susceptibility of GaAs/AlGaAs quantum ring (QR) with the presence of Rashba spin-orbit interaction and acceptor Gaussian impurity have been studied. We have used the shifted 1/N expansion to calculate the energy eigenvalues as a function of the magnetic field. The obtained energies show energy level crossings; transition in the angular momentum of the ground state of the QR. Furthermore, we investigate the dependence of energy eigenvalues of QR on: confinement potential strength, Rashba parameter, and the presence of acceptor impurity. The comparisons show that the present computed results are in a good agreement with the available experimental and theoretical ones.Furthermore, we have shown the variation of the magnetization and magnetic susceptibility with the Hamiltonian variables. These magnetic quantities show an oscillating behavior associated with the phenomena of energy level crossings. The computed results indicate that as the Rashba strength increases, the positions of these oscillating peaks in the magnetic susceptibility curve shift towards a lower magnetic field value.