Abstract
Simultaneous effects of pressure and temperature on electronic and optical properties are studied in a Ga0.7In0.3N/GaN quantum ring using variational formulism. The changes in exciton binding energy due to the applications of hydrostatic pressure and temperature are obtained taking into account the geometrical confinement. The transition energies of interband and intersubband as a function of hydrostatic pressure, at a constant temperature, are obtained. The oscillator strength due to interband and intersubband optical transitions with the combined effects of hydrostatic pressure and temperature is found. The pressure and temperature induced absorption coefficients as a function of photon energy are investigated in a Ga0.7In0.3N/GaN quantum ring. The results show that the application of pressure leads to blue shift of the resonant peaks of the optical transition whereas the effect of temperature suffers red shift of the resonant peaks.
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