Abstract
In this work, we use the Green function method to investigate the effect of hydrostatic pressure and temperature applied on the Ga1-xAlxAs finite barrier cylindrical semiconductor quantum wire (CSQWR) sandwiched between two GaAs semi-infinite cylindrical semiconductor quantum well wires (CSQWWRs). This study is performed in the framework of the effective mass approximation for a finite confinement potential. The results show that the hydrostatic pressure and temperature are of significant effect on the behavior of the energy levels of the CSQWR. As result, we found that the energy levels of electrons in the band conduction decrease as the radius of the CSQWR increases. In addition, the results demonstrate that their energy levels decrease as the pressure increases while increase as the temperature increases. These variations in the energy levels of electrons, as a function of structural and external parameters, allow the production of tunable semiconductor devices.
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