Abstract
The construction of a system which allows simultaneous deposition of HTS films on both sides of 3-inch wafers is described. The wafers are placed in a heating cavity which can be heated to 1000/spl deg/C. Deposition is accomplished through two opposite holes in the cavity by inverted cylindrical magnetron (ICM) sputtering guns. YBaCuO films deposited on 3 inch CeO/sub 2/ buffered sapphire substrates revealed a growth quality and T/sub c/ and j/sub c/ values comparable to standard films with sufficient uniformity on both sides of the wafer. The surface resistance of the films measured in the frequency range of 2.68 to 145 GHz is 20 m/spl Omega/ at the highest frequency.
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