Abstract
A method for the simultaneous determination of transistor noise and gain parameters through noise figure measurements has been presented recently. An improved version of the method is presented here which can also yield all the scattering parameters needed for designing amplifiers. By means of a proper (computer-aided) data-processing technique, s11, s22, |s12| , |S21|, and \s12s21 are determined. As experimental verifications, the characterization of a GaAs MESFET versus frequency (4-8 GHz) is reported.
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