Abstract
The activity coefficient and the diffusion coefficient of boron in single‐crystalline silicon have been determined over a temperature range of 1064–1274 K. Boron vapor with a controlled activity was equilibrated with silicon surface in a quartz capsule. Transferred boron then diffused into the silicon. The activity coefficient of boron was determined from the boron concentration at the silicon surface assuming a local equilibrium between a boron‐containing gas and the surface. The temperature dependence of the activity coefficient at infinite dilution relative to pure solid boron is expressed as In . From the obtained , the standard Gibbs energy of formation of is evaluated as . The diffusion coefficient of boron is determined from the concentration profile as where R is the gas constant, 8.31 J/K mol, and k is the Boltzmann's constant, . © 2000 The Electrochemical Society. All rights reserved.
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