Abstract
Amorphous chalcogenide composition As4Se4Te2 is prepared by the conveniential quenching technique. The separate isothermal annealing or γ irradiation not effected by the physical properties of the prepared sample. The prepared samples are subjected to simultaneous isothermal annealing at temperature 150°C and γ-quanta irradiation. The dark dc conductivity decreases with increasing time of γ-irradiation exposure. At irradiation dose 1.1 M rad, the dc conductivity starts to have metallic-like conductivity character. Also a crossover from the Efros–Shklovskii percolation mechanism of conduction to the Mott variable-range hopping conduction mechanism is detected and discussed. This crossover depends on both temperature and the composition characteristics.
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