Abstract
Abstract This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 thickness for implantation in p-enrichment region. The simulation results indicate that the breakdown voltage decreases linearly with the implantation dose and a high implantation energy can minimize the impact of the screening SiO2 thickness on the breakdown voltage. Additionally, some key process parameters implemented in coming fabrication have been obtained.
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