Abstract
We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high-energy electron diffraction (RHEED) measurements on Si, we observe ion-induced RHEED oscillations, a cancellation of RHEED oscillations during simultaneous equal-rate ion bombardment and growth, and a reversal of growth-induced roughening by subsequent ion bombardment. Comparison between simulations and measurements indicate that a model of the ion/surface interaction characterized by the creation of mobile vacancies with minimal preferential sputtering is sufficient to simulate all the RHEED measurements.
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