Simulations of hybrid direct current radiofrequency (dc/rf) capacitively coupled plasmas

Abstract

Effects of applying a high negative direct current (dc) voltage in argon capacitive coupled plasmas on the flux of secondary electrons (SEs) to a radiofrequency (rf) biased electrode and plasma uniformity were investigated using particle-in-cell Monte Carlo collision simulation and results were compared with experimental results. High energy SEs originating at electrodes with high negative dc voltage due to ion-impact as well as electron-impact were accelerated out of the sheath through the sheath voltage drop. These SEs gain energy equal to the applied dc voltage and either travel to the wafer electrode where they are lost (dumped) or are trapped between electrodes depending on the voltage on bottom electrode. Trapping and dumping of ballistic electrons depends on the magnitudes of the voltages (dc and rf) applied to each electrode. High energy SEs alter the electron energy distribution function at the wafer, high energy electron flux to the wafer and the plasma density profile. With the application of negative dc voltage, wafer receives high energy electron flux with energies up to applied dc voltage. For the range of conditions examined in this paper, the plasma density increases with the application of the negative dc voltage due to ionization by trapping of high energy SEs. The electrons that originate at the negative dc electrode minimize the impact of enhanced radial electric fields at the rf electrode edge allowing dc/rf plasmas to be center peaked even at low (13.56 MHz) rf frequencies.