Simulations of carrier confinement in boron δ‐doped diamond devices

Abstract

AbstractDiamond delta‐doped field effect transistors are expected to combine high speed and high power commutation. Critical parameters for the design of a diamond 2D hole gas were determined. The investigated diamond structures were made of an infinite or semi‐infinite diamond crystal with a low boron concentration and of a thin highly boron‐doped 2D diamond layer called the delta‐layer. The carrier density, wave‐function extension, energy spectrum, and band‐edges along the device depth were calculated depending on the delta‐layer thickness, boron concentration, and device geometry. The simulations showed that the thickness of the delta‐layer and the boron doping concentration were the most important parameters, the fraction of holes delocalized out of the delta‐layer decreasing from 90% for an ideal single atomic plane boron doped at 1021 cm−3 down to 30% for a 3 nm thick layer.