Abstract
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve and excess noise factor fit well with experimental results. Ionization coefficients calculated by the Monte Carlo technique were incorporated into the recurrence model, which is easier to implement and requires less computation time.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
