Abstract
We present an enhanced model to describe the physics of laser chemical processing (LCP), a liquid jet guided laser technique, for local doping processes applied to crystalline silicon solar cells. The main improvement of the numerical model is the consideration of the inhomogeneous laser light intensity profile within the liquid jet cross section. Measurements of the intensity profile show local superelevations of up to factor five compared to the average intensity. A measured intensity profile was implemented into the numerical model and yields good agreement between simulated and measured dopant distributions. Inhomogeneities of the spatial dopant distribution are observed and their impact on LCP line scans for producing doped lines is investigated with respect to solar cell manufacturing.
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