Abstract
The performance of CZTS solar cell, a promising candidate in the field of energy production from sunlight, can be improved by optimizing the parameters of most widely used CdS buffer layer. In this work, numerical study have been done on the typical CZTS solar cell structures containing Mo thin film as back contact on glass substrate using SCAPS-1D solar cell simulation software. Then, the CZTS has been used as the absorber layer followed by CdS buffer later. Following, ZnO and transparent conducting oxide n-ITO layers have been considered as window layer and front contact, respectively. In the simulations, the CdS buffer layer has been doped with three different materials such as Silver (Ag), Copper (Cu) and Chlorine (Cl) for a wide acceptable range of carrier concentration. After obtaining the suitable carrier concentration, the thickness of the doped buffer layer has been varied keeping other layer parameters constant to see the variation of performance parameters open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (η) of the CZTS solar cell.
Highlights
The green and clean solar energy source has a high potential and reliable form of power for electricity generation as the solar energy can be directly converted into electricity using the photovoltaic principles
To study the effect of carrier concentration of doped Cadmium sulfide (CdS) buffer on solar cell, simulations have been done on the structure shown in Fig. 1 with three different dopants such as Silver (Ag), Copper (Cu) and Chlorine (Cl) in CdS layer
First the simulations have been done for Ag-doped CdS/CZTS structure
Summary
The green and clean solar energy source has a high potential and reliable form of power for electricity generation as the solar energy can be directly converted into electricity using the photovoltaic principles. For obtaining cost-effective and highly efficient photovoltaic solar cell, different materials like Si, CdTe, Cu(In,Ga)Se2 (CIGS), C u2ZnSnS4 (CZTS), CZTSSe and organic materials have been considered by many researchers as an absorber layer for the fabrication of solar cell [1,2,3]. CZTS is a quaternary semiconductor with non-toxic earth abundant constituent material. It exhibits excellent photovoltaic properties such as absorption coefficient above 104 cm−1 and direct bandgap of 1.4–1.6 eV [9, 10]. For achieving enhanced performance of the CZTS solar cell, the thickness of the CdS buffer layer should be kept around 50 nm to reduce the absorption loss in the buffer layer [12]. Solar cell performance parameters such as open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (η) have been calculated and performance analysis have been done for Cu-, Cl- and Ag-doped CdS/CZTS solar cell structures
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