Abstract
Abstract This paper presents a simulation study on silicon carbide crystal preparation using the Top-Seeded Solution Growth (TSSG) method. The numerical simulation software CGsim was used to develop a model of the crystal growth process. Simulations were optimized for iron as a solvent under various crystal growth conditions. A comprehensive analysis of crystal growth kinetics, including temperature fields, pressure fields, flow fields, and distributions of carbon diffusion flux, yielded optimal conditions. The best solvent ratio was Si: Fe=50: 50, with an ideal growth temperature of 1700°C. The optimal carbon diffusion flux at the seed crystal was determined to be 6.35×10−6 Kg/m2/s, and the average diffusion flux of carbon in the melt was 3.413×10−5 Kg/m/s. The simulation studies offer valuable insights contributing to technological innovation and advancement in producing silicon carbide single crystals using the TSSG method.
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